A Spanish public research organization has designed a new method to obtain nanostructured hafnium dioxide (HfO2) surfaces deposited on gallium arsenide (GaAs) wafer using laser interferometry and reactive-ion etching (RIE).

The obtained nanostructures have anisotropic attack profiles, and AsGa surfaces (without HfO2), which can be used in developing a new generation of field effect transistors, based on metal-oxide semiconductor.

Companies interested in a patent licence are looked for.